MIT.nano tool talk: Semilab Mercury CV (MCV) probing system

Tuesday, October 20, 11:00am - 1:00pm (EDT)

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MIT.nano recently installed a state-of-the-art Semilab Mercury CV (MCV) probing system (MCV-2201) within Characterization.nano, providing researchers with a powerful tool for rapid electrical characterization of semiconductor materials and structures. The system enables capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements directly on unpatterned wafers, including epitaxial layers and dielectric structures.

The MCV-2201 uses a small, precisely controlled mercury contact to form a temporary metal-semiconductor or metal-insulator-semiconductor structure. By eliminating the need for gate patterning, metal deposition, and annealing, researchers can evaluate material and process characteristics quickly, before committing to device fabrication. The technique has applications across a wide range of semiconductor technologies, including silicon, SiC, GaN, GaAs, Ga₂O₃.

Semilab Senior Scientist Robert Hillard will introduce the capabilities of the MCV-2201 and discuss applications and measurement techniques based on Semilab's experience across these material systems. Following the presentation, attendees will have the opportunity for a hands-on introduction to the system in the MIT.nano cleanroom.

Add to Calendar 2026/10/20 11:00:00 2026/10/20 13:00:00 America/New_York MIT.nano tool talk: Semilab Mercury CV (MCV) probing system MIT.nano recently installed a state-of-the-art Semilab Mercury CV (MCV) probing system (MCV-2201) within Characterization.nano, providing researchers with a powerful tool for rapid electrical characterization of semiconductor materials and structures. The system enables capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements directly on unpatterned wafers, including epitaxial layers and dielectric structures.

The MCV-2201 uses a small, precisely controlled mercury contact to form a temporary metal-semiconductor or metal-insulator-semiconductor structure. By eliminating the need for gate patterning, metal deposition, and annealing, researchers can evaluate material and process characteristics quickly, before committing to device fabrication. The technique has applications across a wide range of semiconductor technologies, including silicon, SiC, GaN, GaAs, Ga₂O₃.

Semilab Senior Scientist Robert Hillard will introduce the capabilities of the MCV-2201 and discuss applications and measurement techniques based on Semilab's experience across these material systems. Following the presentation, attendees will have the opportunity for a hands-on introduction to the system in the MIT.nano cleanroom.

MIT.nano, 12-0168 MITnano mitnano@mit.edu false 30

MIT.nano, 12-0168

MITnano, mitnano@mit.edu